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IGBT

650V,1200V; super junction technology, low switching loss, thin chip, high working frequency; hybrid packaging half/full current SiC SBD,higher switching frequency and efficiency; TO-247-3/4L two types of packaging, better efficiency of Kelvin structure.

  • BV[V]
    1200
    650
  • IC @  100°max [A]
    40
    75
  • VCE(sat)[V]
    1.55
    1.58
    1.65
  • tr[ns]
    61
    60
    28
    48
    28
    22
  • td(off)[ns]
    344
    362
    128
    129
    128
    145
  • tf[ns]
    139
    100
    100
    64
    100
    71
  • Qg[nC]
    307
    306.4
    100
    92
    100
    92
  • Package
    TO247-3L
    TO247-3L
    TO247-4L
    TO247-3L
    TO247-4L
    TO247-3L

Show 0 Products

Product model
BV[V]
IC @  100°max [A]
VCE(sat)[V]
Eon[mJ]
Eoff[mJ]
td(on)[ns]
tr[ns]
td(off)[ns]
tf[ns]
Qg[nC]
Package
HKW40N120FHEA 1200 40 1.67 2.3 1.4 89 61 344 139 307 TO247-3L
HKW40N120FHRA 1200 40 1.65 1.55 1.4 90 60 362 100 306 TO247-3L
HKZ75N65SHRA 650 75 1.58 1.64 0.95 23 28 128 100 100 TO247-4L
HKW75N65SHRA 650 75 1.55 1.28 0.95 17 48 129 64 92 TO247-3L
HKZ75N65SHEA 650 75 1.58 1.64 1 23 28 128 100 100 TO247-4L
HKW75N65SHEA 650 75 1.55 1.67 0.99 14 22 145 71 92 TO247-3L
HKQ100N65FMTA 650 100 1.46 0.34 1.9 17 12 103 133 340 TO-247P-3L
HKW40N120FPTA 1200 40 1.45 2.6 2.4 62 42 276 234 280 TO-247-3L
HKW40N120FHEQ 1200 40 1.67 2.48 1.31 75 44 320 90 307 TO-247-3L