RF Device
Core technology of wireless communication provides the driving force for IoE
Product Line
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LDMOS MMIC
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Integrated Doherty design, covering 700M-5GHz application frequency,peak power 6~12W; self-developed 28V LDMOS technique platform, fully domestic supplied; world leading performance, and mass-production in key customers at home and abroad.
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LDMOS Discrete Devices
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Peak power 20W-6000W; Operating frequency 10MHz-6GHz; Based on independent intellectual property rights of 12V, 28V, 50V LDMOS process platform development, national production supply; Packaging materials independently developed and designed, with low cost, high reliability.
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GaN Discrete Devices
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Peak power 50W to 700W; working frequency up to max.6GHz; the 3rd generation compound semiconductor process has higher efficiency and wider working bandwidth; self-developed packaging materials feature low cost, high air tightness, high thermal conductivi
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Other Packaging Devices
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Peak power up to max.20W; working frequency band covers 10M-10GHz; 5V,12V & 28V technique platform development based on independent intellectual property rights, fully domestic supplied; low cost, high performance product solution can be applied to te