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IGBT

650V，1200V; super junction technology, low switching loss, thin chip, high working frequency; hybrid packaging half/full current SiC SBD，higher switching frequency and efficiency; TO-247-3/4L two types of packaging, better efficiency of Kelvin structure.

  • Voltage
    1200V
    600V
  • IGBT Process
    Field-stop IGBT
    SJ-IGBT Gen2
    SJ-IGBT Gen1
  • Package
    TO-247-3L
    TO-247-4L
    TO-247Plus-3L
    TO-247Plus-4L
  • Status
    MP
    Customer Sample
    Coming Soon

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Product Number
Voltage
Current (A)
IGBT Process
IGBT Type
Copack FRD
VCE_SAT @Tc=25℃
EOFF(mj) @Tc=25℃
Package
Status