Power Device
Watech master the core design, process and packaging technology of power devices and modules.
Product Line
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IGBT
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650V,1200V; super junction technology, low switching loss, thin chip, high working frequency; hybrid packaging half/full current SiC SBD,higher switching frequency and efficiency; TO-247-3/4L two types of packaging, better efficiency of Kelvin structure.
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SiC MOSFET
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1200V, 40/80/160mΩ 1700V,1Ω; high reliability and high efficiency Kelvin structure packaging; use 6‘’Wafer with better cost; suitable for renewable energy vehicles, charging pile, energy storage DC/DC and other applications
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Industrial grade module
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650V 950V 1200V IGBT 1200V SICMOS; low stray inductance, flexible design, for Photovoltaic and Inverter markets; three-level and Half-bridge topology; current 10A-1000A.
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Vehicle grade module
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650V 750V 1200V IGBT 1200V SICMOS; flexible product customization upon different vehicle grades for the needs of renewable energy vehicle customers; single-tube, half bridge and three-phase bridge topologies; current 300A-900A.