HKW75N65SHEA
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Sample Apply
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Description
High-speed IGBT Power Transistor
(Integrated FRD)
![0001-98.jpg](/Public/Uploads/uploadfile2/images/20221114/0001-98.jpg)
Advantages
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Ultra-low switching losses
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Benchmark efficiency in hard switching topologies
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Internal integrated fast&soft recovery anti-parallel FRD
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Maximum junction temperature 175℃
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Qualified according to JEDEC
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RoHS compliant