Your privacy is very important to us.When you visit our website,please agree to the use of all cookies.For more information about personal data processing,please go to Privacy Policy.

HKW40N120FHEA

Description

High-speed IGBT Power Transistor

(Integrated FRD)

0001.jpg

Advantages

  • Ultra-low switching losses

  • Ultra-low static losses

  • Internal integrated fast&soft recovery anti-parallel FRD

  • Maximum junction temperature 175℃

  • Qualified according to JEDEC

  • RoHS compliant

28V LDMOS MMIC

Company*

Name*

Position*

Phone*

E-mail*

Content *

I have read and agree《Watch privacy protection policy》

Submit