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SiC MOSFET

1200V, 40/80/160mΩ 1700V,1Ω; high reliability and high efficiency Kelvin structure packaging; use 6‘’Wafer with better cost; suitable for renewable energy vehicles, charging pile, energy storage DC/DC and other applications

  • VBRDSSmax [V]
    1200
    1700
  • RDS (on) Typ.
    80mohm
    40mohm
    1ohm
  • ID  @25°Cmax [A]
    6.9
    35
    55
  • VGS(th)Typ.（V）
    3
  • Package
    TO-247-4L
    TO-247-3L
    TO-263-7L

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Product Number
VBRDSSmax [V]
RDS (on) Typ.
ID  @25°Cmax [A]
VGS(th)Typ.（V）
Package
HMZ080S120A 1200 80mohm 35 3 TO-247-4L
HMW080S120A 1200 80mohm 35 3 TO-247-3L
HMZ040S120A 1200 40mohm 55 3 TO-247-4L
HMW040S120A 1200 40mohm 55 3 TO-247-3L
HMW1KS170A 1700 1ohm 6.9 3 TO-247-3L
HMBF1KS170A 1700 1ohm 6.9 3 TO-263-7L