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HKZ75N65SHEA

Description

High-speed IGBT Power Transistor

(Integrated FRD)

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Advantages

  • Ultra-low switching losses

  • Benchmark efficiency in hard switching topologies

  • Internal integrated fast&soft recovery anti-parallel FRD

  • Maximum junction temperature 175℃

  • Qualified according to JEDEC

  • RoHS compliant

28V LDMOS MMIC

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