Your privacy is very important to us.When you visit our website,please agree to the use of all cookies.For more information about personal data processing,please go to Privacy Policy.

B2banner.jpg b5banph.jpg

LDMOS Discrete Devices

Peak power 20W-6000W; Operating frequency 10MHz-6GHz; Based on independent intellectual property rights of 12V, 28V, 50V LDMOS process platform development, national production supply; Packaging materials independently developed and designed, with low cost, high reliability.

  • Min. Freq.(MHz)
    700
    3000
    6000
  • Max. Freq.(MHz)
    1000
    2000
    3000
  • VDD(V)
    18
    28
  • Pavg(dBm)
    18
    4
  • ACPR
    -47.1
    -48
    -49.5
    -48.9
    -47
    -46.3
    -44.5
    -45
    -35
    -25
  • Test Freq.(MHz)
    3400
    2140
    2600
    3450
    184
    940
    881
    1840
    1960
    945
    780
    2140
  • MP Status
    MP
  • Package
    PDFN5*5
    TO270
    ACC2110S-2L2L
    ACS2110S-4L
  • Process
    LDMOS

Show 0 Products

Product model
Min. Freq.(MHz)
Max. Freq.(MHz)
VDD(V)
Pavg(dBm)
DE(%)
Gain(dB)
ACPR
Test Freq.(MHz)
MP Status
Package
Process
HTN7G38S007P 700 3800 28 28.8 17.4 14.2 -47.1 3400 MP PDFN5*5 LDMOS
HTN7G27S010P 700 2700 28 31 18.1 19.1 -48 2140 MP PDFN6*5 LDMOS
HTN8G27S015P 700 2700 28 30 12 20.2 -49.5 2600 MP PDFN5*5 LDMOS
HTN8G36S015P 3300 3600 28 30 11.9 18.2 -48.9 3450 MP PDFN5*5 LDMOS
HTN7G21S040P 700 2100 28 36 16.5 16.1 -47 1840 MP TO270 LDMOS
HTN7G09S120P 100 960 28 40.5 19.4 22.1 -44.5 881 MP TO270 LDMOS
HTN7G21S160H 1805 2170 28 42 21.9 17.3 -45 1840 MP ACC2110S-2L2L LDMOS
HTN7G21P160H 1805 2170 28 44.8 40 16.7 -35 1960 MP ACC2110S-4L2L LDMOS
HTH9G09P550S 700 960 48 49 54 20 -25 945 MP ACS2110S-4L LDMOS
HTH9G09P700S 758 803 48 50.5 56 19.5 -25 780 MP ACS3210S-4L LDMOS
HTN8G27S020PG 700 2700 28 34 55 19 / 2140 MP T0270 /
HTN7G09S060P 100 960 28 39 19.5 21.8 -46.3 940 MP TO270 LDMOS