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SiC SBD

650V，1200V，1700V close to zero recovery loss, high power density and high efficiency can be achieved; MPS structure, with excellent anti-surge ability Use 6‘’wafer，lead time 6-8 weeks.

  • VRmax [V]
    650
    1200
    1700
  • IF [A]
    4
    6
    10
    12
    20
    30
    40
  • VFmax [V]
    1.4
    1.5
    1.75
    1.8
  • IR[μA]
    1
    2
    10
    11
  • QC[nc]
    17
    27
    28
    50
    95
    100
    190
    191
  • Package
    TO-252-2
    TO-220-2
    TO-220-2-iso
    TO-247-3
    TO-247-2

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Product Number
VRmax [V]
IF [A]
VFmax [V]
IR[μA]
QC[nc]
Package
HDD04S065A 650 4 1.75 1 17 TO-252-2
HDD06S065A 650 6 1.75 1 17 TO-252-2
HDP06S065A 650 6 1.75 1 17 TO-220-2
HDF10S065A 650 10 1.4 2 27 TO-220-2-iso
HDW20S065B 650 20 1.7 2 28 TO-247-3
HDW30S065A 650 30 1.8 2 85 TO-247-2
HDD10S120A 1200 10 1.5 2 50 TO-252-2
HDW20S120A 1200 20 1.8 10 95 TO-247-2
HDW20S120B 1200 20 1.5 10 50 TO-247-3
HDW30S120B 1200 30 1.8 10 100 TO-247-3
HDW40S120B 1200 40 1.8 10 190 TO-247-3
HDW40S120A 1200 40 1.8 11 191 TO-247-2
HDW12S170A 1700 12 1.8 1.5 192 TO-247-2