RugSiC (Rugged-SiC) is a high-robustness silicon carbide device featuring exceptional reliability and GaN-comparable high-frequency performance. It is the first new-concept semiconductor device independently invented in China with fully owned IP since the transistor’s birth in 1947, and is expected to serve as a key component across global consumer and industrial applications.

- Superior Performance: LoongSpeedz RugSiC is an enhancement-mode normally-off device with ≥20% lower Rsp and 15% smaller die than leading competitors, offering stronger tolerance to abnormal conditions.
- High Short-Circuit Robustness: ~70% lower high-temperature saturation current enables >10µs short-circuit capability (tested), simplifying automotive protection circuits and improving safety margin.
- Excellent Time-Domain Consistency: table channel performance with no threshold drift ensures synchronized switching in high-frequency multi-device setups.
- Long Device Lifetime: No gate-oxide breakdown issues provide longer lifetime and lower O&M costs in new-energy systems.
- Proven Reliability: RugSiC has passed all JEDEC reliability tests.
- Normally-off SiC JFET
- Without gate oxide, eliminating associated reliability concerns
- 4–5x higher short-circuit ruggedness than SiC VDMOS
- Extremely low switching losses
- Switching performance comparable to power GaN

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