HTH1D38P060P
Description
This asymmetrical Doherty RF power GaN Transistor with saturation output power 56W is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3800 MHz.
Advantages
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Operating Frequency Range: 3.4 to 3.8 GHz
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Operating Drain Voltage: +48 V
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Saturation Output Power: 56 W
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Advanced Linearity Performance
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High Efficiency
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High terminal impedance for optimal broadband performance
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High reliability
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Small footprint package, DFN 7x6.5
