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GaN Discrete Devices

Peak power 50W to 700W; working frequency up to max.6GHz; the 3rd generation compound semiconductor process has higher efficiency and wider working bandwidth; self-developed packaging materials feature low cost, high air tightness, high thermal conductivi

  • Min. Freq.(MHz)
    3400
    2500
    758
    2110
    2500
  • Max. Freq.
    3600
    2700
    960
    2170
  • VDD(V)
    48
  • Pavg(dBm)
    47.4
    50.5
    41.8
  • DE(%)
    48.7
    52
    65
    57
    57.5
  • Gain(dB)
    14.5
    18.2
    15.5
    16
  • ACPR(dBc)
    -27
    -26
    -25
    -31
  • Test Freq.
    3500
    2600
    780
    2140
    2600
  • MP Status
    MP
    Q2/2022
    Q3/2022
  • Package
    ACC2110S-4L
    ACS2110S-4L
    QFN7*6.5
  • Process
    GaN

Show 0 Products

Product model
Min. Freq.(MHz)
Max. Freq.
VDD(V)
Pavg(dBm)
DE(%)
Gain(dB)
ACPR(dBc)
Test Freq.
MP Status
Package
Process
HTH1D36P450H 3400 3600 48 47.4 48.7 14.5 -27 3500 MP ACC2110S-4L GaN
HTH1D27P450H 2500 2700 48 47.4 52 14.5 -27 2600 Q2/2022 ACC2110S-4L GaN
HTH1D09P700S 758 960 48 50.5 65 18.2 -26 780 Q3/2022 ACS2110S-4L GaN
HTH1D21P700H 2110 2170 48 50.5 57 15.5 -25 2140 Q2/2022 ACS2110S-4L GaN
HTH1D27P120P 2500 2700 48 41.8 57.5 16 -31 2600 Q2/2022 QFN7*6.5 GaN